Senior FBAR Engineer (Electronics / MEMS)

Responsibilities

• Analyze Q-limiting mechanisms and execute structural, material, and geometry optimizations across FBAR layers to minimize acoustic loss.
• Lead FBAR resonator design, simulation, and experimental validation from concept through prototyping.
• Collaborate with internal process engineers and external MEMS foundries to establish robust manufacturing flows and process windows.
• Conduct competitive benchmarking against leading FBAR products to drive differentiated design approaches and IP patent strategy.
• Establish standardized Q-factor characterization methodologies and analyze the impact of process variations on device performance.

Requirements

• Master’s or PhD in Microelectronics, Materials Science, Applied Physics, MEMS Engineering, or a related field.
• Minimum 3 years of hands-on experience in FBAR resonator development, ideally with experience taking designs into volume production.
• Deep knowledge of FBAR physics, Q-factor mechanics, mainstream architectures, and AlN/ScAlN piezoelectric thin films.
• Proficiency in simulation tools (such as COMSOL), RF characterization equipment, and MEMS fabrication techniques.
• Ability and willingness to travel to China up to 50% per month.
• Proven track record in leading Q-factor improvement projects, holding patents, or publishing technical research is an advantage.

Interested candidates who wish to apply for the advertised position, please click on the APPLY button below to send in your resume or send to [email protected]

EA License No: 13C6305

Reg. No.: R1985234 (GOH HOOI MING)

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