Principal Engineer – Memory Process Pathfinding

This is a chance to do advanced memory R&D at one of Singapore’s most recognised semiconductor sites. The site’s current fab was the first front-end fab in the world to be recognised by the World Economic Forum as both an Advanced Fourth Industrial Revolution Lighthouse and a Sustainability Lighthouse. The company is also investing about US$7 billion in a new HBM advanced packaging facility, the first of its kind in Singapore, and its future Singapore expansion plans will also support long-term NAND manufacturing.

RESPONSIBILITIES:

• Lead the dry etch process roadmap for next-generation NAND, meeting structural, electrical and yield targets

• Develop new plasma chemistries, processes and equipment capabilities for future nodes

• Manage new, high-performance dry etch chambers

• Use data analytics, AI/ML and predictive modelling to speed up process learning and improve etch performance

• Work closely with Process Integration, Thin Films, Wet Etch, Diffusion, Lithography, CMP and Device teams

REQUIREMENTS:

• Hands-on ICP and/or CCP plasma etch experience in semiconductor process development

• Strong grasp of plasma-surface interactions, etch chemistry, profile control and etch equipment

• Foundation in plasma physics, materials interactions and process integration

• Experience developing and refining dry etch processes for advanced technologies

• Familiarity with statistical analysis and process optimisation

• Ability to work across multidisciplinary teams

Preferred

• PhD or MS with 7 to 10 years in dry etch or process development

• High aspect ratio (HAR) etch, pattern transfer, selective etch

• ML, predictive or virtual process modelling applied to technology development

• Autonomy in a fast-moving R&D setting, strong communication skills

• Mentoring or technical project leadership

Please contact Mandy George at [email protected] for a confidential discussion.

EA License no: 16S8066 | Reg no.: R1767184

Only successful candidates will be notified.